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| Semiconductor STA353 PNP Silicon Transistor Descriptions * High current application * Audio power amplifier Features * High current : IC = -2A * Complementary pair with STC352 Ordering Information Type NO. STA353 Marking STA353 Package Code MPT Outline Dimensions 6.50.2 unit : mm 21.51.0 1.10.1 1.2 Max. 0.70 Max. 0.4~0.6 1 2 3 2.50.1. 5.00.2 12.5 Min. 8.50.2 PIN Connections 1. Emitter 2. Collector 3. Base 3.40.2 2.00.1 KST-B002-000 0.50.2 1 STA353 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Emitter Current Collector Power dissipation Junction temperature Storage temperature (Ta=25C) Symbol VCBO VCEO VEBO IC IE PC ( Tc=25) PC ( Ta=25) Tj Tstg Rating -40 -30 -5 -2 2 10 1.2 150 -55~150 Unit V V V A A W C C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Base-Emitter on voltage Collector-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE* VBE(ON) VCE(sat)1 VCE(sat)2 fT Cob Test Condition IC=-100A, IE=0 IC=-10mA, IB=0 IE=-1mA, IC=0 VCB=-40V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-500mA VCE=-2V, IC=-500mA IC=-2A, IB=-0.2A IC=-1.5A, IB=-0.03A VCE=-5V, IC=-500mA VCB=-10V, IE=0, f=1MHz Min. Typ. Max. -40 -30 -5 100 120 48 -0.1 -0.1 320 -1 -0.8 -2 - Unit V V V A A V V MHz pF * : hFE rank / O : 100~200, Y : 160~320 KST-B002-000 2 STA353 Electrical Characteristic Curves Fig. 1 PC - TA Fig. 2 VCE(sat) - IC Fig. 3 fT - IC Fig. 4 COb - VR Fig. 5 hFE - IC Fig. 6 IC - VBE KST-B002-000 3 STA353 Fig. 7 Safe Operating Area Fig. 8 PC - TC KST-B002-000 4 |
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